NDLI: A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

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Table of contents

IEEE Electron Device Letters publication information

Changes in the Editorial Board

Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

Current Crowding in High Performance Low-Loss HFET RF Switches

0.25 $muhbox{m}$ Self-Aligned AlGaN/GaN High Electron Mobility Transistors

Radio-Frequency-Noise Characterization and Modeling of Type-II InP–GaAsSb DHBT

Volterra-Series-Based Distortion Analysis for Optimization of Out-of-Band Terminations in GaN HEMT Devices

Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate

Novel Integration of Metal–Insulator–Metal (MIM) Capacitors Comprising Perovskite-type Dielectric and Cu Bottom Electrode on Low-Temperature Packaging Substrates

Cost-Effective Low $V_{t}$ Ni-FUSI CMOS on SiON by Means of Al Implant (pMOS) and $hbox{Yb}{+}hbox{P}$ Coimplant (nMOS)

A Temperature-Accelerated Method to Evaluate Data Retention of Resistive Switching Nonvolatile Memory

A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs

Switching Device Based on a Thin Film of an Azo-Containing Polymer for Application in Memory Cells

Forming Process Investigation of $hbox{Cu}_{x} hbox{O}$ Memory Films

Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate Dielectric

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $hbox{HfO}_{2}$ MOSFET Devices

Improved Electrical Properties of ALD $hbox{Hf}_{x} hbox{Zr}_{1 - x}hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer

Electrical Characteristics of the HfAlON Gate Dielectric With Interfacial UV-Ozone Oxide

Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear Plastic

Correlation of Current Noise Behavior and Dark Spot Formation in Organic Light-Emitting Diodes

Gated Diode Design to Mitigate Radiation Damage in X-Ray Imagers

Complementary Logic Gates and Ring Oscillators on Plastic Substrates by Use of Printed Ribbons of Single-Crystalline Silicon

Strained Silicon–Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

High Voltage (3130 V) 4H-SiC Lateral p-n Diodes on a Semiinsulating Substrate

PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- $hbox{SiN}_{x}$ Stressing Layer

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon–Carbon Source/Drain

Localization of Gate Bias Induced Threshold Voltage Degradation in a-Si:H TFTs

High-Performance Poly-Si TFTs With $hbox{Pr}_{2} hbox{O}_{3}$ Gate Dielectric

Demonstration of High-Performance PMOSFETs Using $ hbox{Si}$–$hbox{Si}_{x}hbox{Ge}_{1 - x}$ –$hbox{Si}$ Quantum Wells With High- $kappa$/Metal-Gate Stacks

Multiple-Gate CMOS Thin-Film Transistor With Polysilicon Nanowire

RTS Noise Characterization in Flash Cells

Charge Retention Loss in a $hbox{HfO}_{2}$ Dot Flash Memory via Thermally Assisted Tunneling

Flip-Cathode Design for Carbon Nanotube-Based Vacuum Triodes

Resistive Coupling Efficiency Criterion for Evaluating Substrate Shielding Structures of Transformers

MOSFETs RF Noise Optimization via Channel Engineering

Performance Comparisons Between Cu/Low-$kappa$ , Carbon-Nanotube, and Optics for Future On-Chip Interconnects

SB-MOSFETs in UTB-SOI Featuring PtSi Source/Drain With Dopant Segregation

Gate Fringe-Induced Barrier Lowering in Underlap FinFET Structures and Its Optimization

Programmable via Using Indirectly Heated Phase-Change Switch for Reconfigurable Logic Applications

IEEE Electron Devices Society Meetings Calendar for 2008 (as of 03 December 2007)

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A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Content Provider	IEEE Xplore Digital Library
Author	Saito, W. Nitta, T. Kakiuchi, Y. Saito, Y. Tsuda, K. Omura, I. Yamaguchi, M.
Copyright Year	1980
Abstract	A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.
Sponsorship	IEEE Electron Devices Society
Starting Page	8
Ending Page	10
Page Count	3
File Size	227590
File Format	PDF
ISSN	07413106
Volume Number	29
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Power electronics Circuits HEMTs Switching converters Electron mobility Aluminum gallium nitride Breakdown voltage Power generation Switching frequency power semiconductor device GaN HEMT high voltage
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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