NDLI: A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs

Content Provider	IEEE Xplore Digital Library
Author	Redaelli, A. Pirovano, A. Tortorelli, I. Ielmini, D. Lacaita, A.L.
Copyright Year	1980
Abstract	This letter investigates the extraction of activation energy for the crystallization of an amorphous chalcogenide material in phase-change memories. It is demonstrated for the first time that the critical resistance, which is the value of resistance defining the crystallization time for the chalcogenide material, has a major impact on the extraction of the activation energy for crystallization. Applying a statistical Monte Carlo model for crystallization coupled with an electrothermal model for both the amorphous and crystalline phases, we analyzed the standard methodology for the extraction of the activation energy. It is shown that a careful choice of the critical resistance is mandatory and a new accurate technique is proposed, resulting in a reliable value for the crystallization activation energy of 2.6 eV in the Ge₂Sb₂Te₂-based devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	41
Ending Page	43
Page Count	3
File Size	198569
File Format	PDF
ISSN	07413106
Volume Number	29
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystallization Phase change materials Amorphous materials Temperature distribution Nonvolatile memory Annealing Crystalline materials Electrical resistance measurement Phase change memory Mechanical factors retention Chalcogenide crystallization nonvolatile memory phase change memory (PCM)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

Analytical Modeling of Chalcogenide Crystallization for PCM Data-Retention Extrapolation

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Incomplete Filament Crystallization During Set Operation in PCM Cells

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Parasitic reset in the programming transient of PCMs

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