NDLI: The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of <formula formulatype=inline><tex>$hbox{HfO}

Content Provider	IEEE Xplore Digital Library
Author	Hokyung Park Minseok Jo Hyejung Choi Hasan, M. Rino Choi Kirsch, P.D. Chang Young Kang Byoung Hun Lee Tae-Wook Kim Takhee Lee Hyunsang Hwang
Copyright Year	1980
Abstract	To understand the influence of oxygen vacancies in on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO₂ with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various postdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO₂ . With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO₂ nMOSFET.
Sponsorship	IEEE Electron Devices Society
Starting Page	54
Ending Page	56
Page Count	3
File Size	492324
File Format	PDF
ISSN	07413106
Volume Number	29
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Oxygen Hafnium oxide Dielectrics MOSFET circuits Pollution measurement Atomic force microscopy Annealing Atomic measurements Capacitors CMOS process oxygen vacancy Charge trapping conducting atomic force microscopy (C-AFM) hafnium oxide
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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