NDLI: Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

Content Provider	IEEE Xplore Digital Library
Author	Xin Peng Wang Eu-Jin Lim, A. Hong Yu Yu Ming-Fu Li Chi Ren Wei-Yip Loh Chun Xiang Zhu Chin, A. Trigg, A.D. Yee-Chia Yeo Biesemans, S. Guo-Qiang Lo Dim-Lee Kwong
Copyright Year	1963
Abstract	A lanthanum (La)-doped HfN is investigated as an n-type metal gate electrode on SiO₂ with tunable work function. The variation of La concentration in (HfinfinLa_1-x)N_y modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed at the metal/SiO₂ interface due to the (HfinfinLa_1-x)N_y and SiO₂ interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a refractory metal nitride for CMOS technology are proposed.
Sponsorship	IEEE Electron Devices Society
Starting Page	2871
Ending Page	2877
Page Count	7
File Size	759969
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Metals Silicon Annealing Dielectrics Thermal stability Laboratories $(\hbox{Ta}_{x}\hbox{Al}_{1 - x}){\rm N}_{y}$ High-$k$ gate dielectric metal gate MOSFET work function tuning $(\hbox{Hf}_{x}\hbox{La}_{1 - x}){\rm N}_{y}$
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process

Reliability and Thermal Stability of Clustered Vertical Furnace-Grown $hbox{SiO}_{2}$ With $hbox{Hf}_{rm x}hbox{Ta}_{rm y}hbox{N}$ Metal Gate for Advanced MOS Device Application

Determination of Work Functions in the $hbox{Ta}_{1 - x}hbox{Al}_{x}hbox{N}_{y}/hbox{HfO}_{2}$ Advanced Gate Stack Using Combinatorial Methodology

Effective Work Function Engineering of $hbox{Ta}_{x}hbox{C}_{y}$ Metal Gate on Hf-Based Dielectrics

Electrical Characteristics and Thermal Stability of $ hbox{Hf}_{x}hbox{Ta}_{y}hbox{Si}_{z}hbox{N}$ Metal Gate Electrode for Advanced MOS Devices

Impacts of Zr Composition in $hbox{Hf}_{1-x} hbox{Zr}_{x}hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

Turn-Around Effect of $V_{rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $hbox{HfO}_{x}hbox{N}_{y}$ Gate Dielectrics

Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD- $hbox{Al}_{2}hbox{O}_{3}$ Gate Dielectric

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

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