NDLI: Determination of Work Functions in the <formula formulatype=inline><tex Notation=TeX>$hbox{Ta}_{1 - x}hbox{Al}_{x}hbox{N}_{y}/hbox{HfO}_{2}$</tex></formula> Advanced Gate Stack Using Combinatorial Methodology

Content Provider	IEEE Xplore Digital Library
Author	Kao-Shuo Chang Green, M.L. Hattrick-Simpers, J.R. Takeuchi, I. Suehle, J.S. Celik, O. De Gendt, S.
Copyright Year	1963
Abstract	Combinatorial methodology enables the generation of comprehensive and consistent data sets, compared with the ldquoone-composition-at-a-timerdquo approach. We demonstrate, for the first time, the combinatorial methodology applied to the work function (Phi_m) extraction for Ta_1-xAl_xN_y alloys as metal gates on HfO₂, for complementary metal-oxide-semiconductor applications, by automated measurement of over 2000 capacitor devices. Scanning X-ray microdiffraction indicates that a solid solution exists for the Ta_1-xAl_xN_y libraries for 0.05 les x les 0.50. The equivalent oxide thickness maps offer a snapshot of gate stack thermal stability, which show that Ta_1-xAl_xN_y alloys are stable up to 950^degC . The Phi_m of the Ta_1-xAl_xN_y libraries can be tuned as a function of gate metal composition over a wide (0.05 les x les 0.50) composition range, as well as by annealing. We suggest that Ta_0.9Al_0.1N_1.24 gate metal electrodes may be useful for p-channel metal-oxide-semiconductor applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	2641
Ending Page	2647
Page Count	7
File Size	724792
File Format	PDF
ISSN	00189383
Volume Number	55
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Libraries Metals Films Thermal stability Annealing Silicon work function Combinatorial methodology complementary metal–oxide–semiconductor (CMOS) equivalent oxide thickness (EOT) flatband voltage $\hbox{Ta}_{1 - x}\hbox{Al}_{x}\hbox{N}_{y}$
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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