NDLI: Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon

Content Provider	IEEE Xplore Digital Library
Author	Kah-Wee Ang King-Jien Chui Chih-Hang Tung Balasubramanian, N. Samudra, G.S. Yee-Chia Yeo
Copyright Year	1963
Abstract	We report the demonstration of a novel strained silicon-on-insulator N-MOSFET featuring silicon-carbon (Si_1-yC_y) source and drain (S/D) regions, tantalum nitride metal gate, and hafnium-aluminum oxide high-k gate dielectric. Due to the lattice mismatch between Si_0.99C_0.01 S/D stressors and Si, a lateral tensile strain is induced in the transistor channel, leading to substantial electron mobility enhancement. At a fixed OFF-state leakage of 100 nA/mum, the Sii-j/C_1-yC_y S/D N-MOSFET having a width of 4.7 mum achieves a drive current Josat enhancement of 16% over a control N-MOSFET. This iDsat enhancement, which is primarily attributed to strain-induced mobility improvement, is found to increase with decreasing gate length LG due to an increased strain level in the transistor channel as the Si_1-yC_y S/D stressors are placed in closer proximity. Slightly improved series resistance with Si_1-yC_y S/D regions in a strained N-MOSFET accounted for approximately 2% I_Dsat gain. In addition, a reduction of device width is found to reduce the drive current enhancement of the N-MOSFETs due to the presence of a transverse compressive strain in the transistor channel induced by the isolation regions.
Sponsorship	IEEE Electron Devices Society
Starting Page	2910
Ending Page	2917
Page Count	8
File Size	822044
File Format	PDF
ISSN	00189383
Volume Number	54
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon MOSFET circuits Logic gates Transistors Tensile strain Dielectrics Films silicon–carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Lateral tensile strain N-MOSFET
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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