NDLI: Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy

Content Provider	IEEE Xplore Digital Library
Author	Shou-Yi Kuo Kei, C.C. Chien-Nan Hsiao Chao, C.K. Fang-I Lai Hao-Chung Kuo Wen-Feng Hsieh Shing-Chung Wang
Copyright Year	2002
Abstract	High-density GaN nanorods with outstanding crystal quality were grown on c-sapphire substrates by radio-frequency plasma-assisted metalorganic molecular beam epitaxy under catalyst- and template-free growth condition. Morphological and structural characterization of the GaN nanorods was employed by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy (HRTEM). These results indicate that the rod number density can reach 1/spl times/10/sup 10/ cm/sup -2/ and the nanorods are well-aligned with preferentially oriented in the c-axis direction. Meanwhile, no metallic (Ga) droplet was observed at the end of the rods, which is the intrinsic feature of vapor-liquid-solid method. Nanorods with no traces of any extended defects, as confirmed by TEM, were obtained as well. In addition, optical investigation was carried out by temperature- and power-dependent micro-photoluminescence (/spl mu/-PL). The PL peak energies are red-shifted with increasing excitation power, which is attributed to many-body effects of free carriers under high excitation intensity. The growth mechanism is discussed on the basis of the experimental results. Catalyst-free GaN nanorods presented here might have a high potential for applications in nanoscale photonic devices.
Sponsorship	IEEE Nanotechnology Council
Starting Page	273
Ending Page	277
Page Count	5
File Size	1100913
File Format	PDF
ISSN	1536125X
Volume Number	5
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Molecular beam epitaxial growth Scanning electron microscopy Transmission electron microscopy Nanoscale devices Substrates Radio frequency Plasma density Plasma x-ray sources X-ray diffraction nanotechnology Catalyst free GaN nanorod metalorganic molecular-beam epitaxy
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Cathodoluminescence spectra of gallium nitride nanorods

Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

GaN Nanowires Grown by Molecular Beam Epitaxy

Wurtzite GaN-based heterostructures by molecular beam epitaxy

GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

Growth of GaAs Nanowires on Si Substrates Using a Molecular Beam Epitaxy

Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy

Similar Documents

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Cathodoluminescence spectra of gallium nitride nanorods

Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

GaN Nanowires Grown by Molecular Beam Epitaxy

Wurtzite GaN-based heterostructures by molecular beam epitaxy

GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

Growth of GaAs Nanowires on Si Substrates Using a Molecular Beam Epitaxy

Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy