NDLI: Analytical modeling of field-induced interband tunneling-effect transistors and its application

Content Provider	IEEE Xplore Digital Library
Author	Seung-Hwan Song Kyung Rok Kim Sangwoo Kang Jin Ho Kim Jung Im Huh Kwon Chil Kang Ki-Whan Song Jong Duk Lee Byung-Gook Park
Copyright Year	2002
Abstract	In the room-temperature I-V characteristics of field-induced interband tunneling-effect transistors (FITETs), negative-differential conductance (NDC) characteristics as well as negative-differential transconductance (NDT) characteristics have been observed. The key operation principle of this quantum-tunneling device is the field-induced interband tunneling. To include the effect of interband tunneling, we have developed an analytical equation of interband tunneling current. Due to the inherent SOI-MOSFET structure of the FITET, the current equation of MOSFET has also been included in the analytical equation of the FITET. By comparing the calculated data from these two current components with the measured data, an additional excess tunneling current component has been introduced in the final analytical equation of the FITET. SPICE simulation results with this analytical model have shown good agreements with the experimental results. Also, this analytical model has been applied to verify the functionality of a simple digital logic gate such as XOR and four-level parity checker made by one FITET.
Sponsorship	IEEE Nanotechnology Council
Starting Page	192
Ending Page	200
Page Count	9
File Size	571636
File Format	PDF
ISSN	1536125X
Volume Number	5
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analytical models Tunneling Equations CMOS technology Transconductance MOSFET circuits SPICE Quantum mechanics Degradation Nanoscale devices XOR Analytical model field-induced interband tunneling-effect transistor (FITET) interband tunneling multivalued logic negative-differential conductance (NDC) negative-differential transconductance (NDT) parity checker
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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