NDLI: Wurtzite GaN-based heterostructures by molecular beam epitaxy

Content Provider	IEEE Xplore Digital Library
Author	Morkoc, H.
Copyright Year	1995
Abstract	Progress in plasma and reactive molecular beam epitaxy (PMBE and RMBE) grown n- and p-type GaN and GaN-AlGaN-based epitaxial films and optoelectronic devices is reviewed. The growth of GaN by RMBE (PMBE) is achieved by employing ammonia gas (plasma activated nitrogen) as the nitrogen source with resultant growth rates of about 2 /spl mu/m/h (/spl ges/1 /spl mu/m/h). The structural, electrical, and optical properties of binary and ternary (Al,Ga)N and (In,Ga)N layers point to high quality. The GaN layers with Mg as the dopant atoms are p-type without any postgrowth treatment, but the hole concentrations are limited to mid 10/sup 17/ cm/sup -3/ although reports in the low 10/sup 18/ cm/sup -3/ dot the literature. The background carrier concentration, mobility, optical characteristics and ability to dope p-type depend significantly on the substrate temperature and V-III ratio employed, AlGaN-GaN, and GaN-InGaN electroluminescent devices have been realized but lack commercial quality. The AlGaN-GaN photodiodes by RMBE exhibited a maximum zero-bias responsivity of 0.12 A/W at 364 nm, which decreased by more than three orders of magnitude for wavelengths longer than 390 nm. A reverse bias of -10 V raised the responsivity to 0.15 A/W without any significant increase in noise. The noise equivalent noise power near zero bias is below the detection limit of the measurement setup. At a reverse bias of 28 V, the total noise equivalent power is 2.06/spl times/10/sup -11/ W.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	537
Ending Page	549
Page Count	13
File Size	244975
File Format	PDF
ISSN	1077260X
Volume Number	4
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Molecular beam epitaxial growth Gallium nitride Optical films Plasma devices Plasma sources Nitrogen Aluminum gallium nitride Optoelectronic devices Plasma properties Atom optics
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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