NDLI: Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si interface on electrical characteristics of MOS devices

Content Provider	IEEE Xplore Digital Library
Author	Chin-Lung Cheng Chun-Yuan Lu Kuei-Shu Chang-Liao Ching-Hung Huang Sheng-Hung Wang Tien-Ko Wang
Copyright Year	1963
Abstract	Effects of the defects at high-/spl kappa/ dielectric/Si interface on the electrical characteristics of MOS devices are important issues. To study these issues, a low defect (denuded zone) at Si surface was formed by a high-temperature annealing in hydrogen atmosphere in this paper. Our results reveal that HfO/sub x/N/sub y/ demonstrates significant improvement on the electrical properties of MOS devices due to its low amount of the interstitial oxygen [O/sub i/] and the crystal-originated particles defects as well as small surface roughness at HfO/sub x/N/sub y//Si interface. The current-conduction mechanism of the HfO/sub x/N/sub y/ film at the low- and high-electrical field and high-temperature (T>100/spl deg/C) is dominated by Schottky emission and Frenkel-Poole (FP) emission, respectively. The trap energy level involved in FP conduction was estimated to be around 0.5eV. Reduced gate leakage current, stress-induced leakage current and defect generation rate, attributable to the reduction of defects at HfO/sub x/N/sub y//Si interface, were observed for devices with denuded zone. The variable rise and fall time bipolar-pulse-induced current technique was used to determine the energy distribution of interface trap density (D/sub it/). The results exhibit that relatively low D/sub it/ can be attributed to the reduction of defects at Si surface. By using denuded zone at the Si surface, HfO/sub x/N/sub y/ has demonstrated significant improvement on electrical properties as compared to SiO/sub x/N/sub y/.
Sponsorship	IEEE Electron Devices Society
Starting Page	63
Ending Page	70
Page Count	8
File Size	689818
File Format	PDF
ISSN	00189383
Volume Number	53
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MIS devices Dielectric materials Interface phenomena Annealing Leakage currents Hafnium compounds Silicon Defect generation rate denuded zone electrical characteristic interface trap density interstitial oxygen defects MOS stress-induced leakage current (SILC)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si(111) interface on current conduction and charge trapping of MOS devices

Comparison of sub 1 nm TiN/HfO/sub 2/ with poly-Si/HfO/sub 2/ gate stacks using scaled chemical oxide interface

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

Dominant SILC mechanisms in HfO/sub 2//TiN gate nMOS and pMOS transistors

MOS Characteristics of synthesized HfAlON-HfO/sub 2/ stack using AlN-HfO/sub 2/

Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer

The electrical properties of HfO/sub 2/ dielectric on germanium and the substrate doping effect

Metal gate MOSFETs with HfO/sub 2/ gate dielectric

Investigation of poly-Si/HfO/sub 2/ gate stacks in a self-aligned 70nm MOS process flow

Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si interface on electrical characteristics of MOS devices

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