NDLI: Engineering density of semiconductor-dielectric interface states to modulate threshold voltage in OFETs

Content Provider	IEEE Xplore Digital Library
Author	Wang, A. Kymissis, I. Bulovic, V. Akinwande, A.I.
Copyright Year	1963
Abstract	Threshold-voltage control is critical to the further development of pentacene organic field-effect transistors (OFETs). In this paper, we demonstrate that the threshold voltage can be tuned through chemical treatment of the gate dielectric layer. We show that oxygen plasma treatment of an organic polymer gate dielectric, parylene, introduces traps at the semiconductor-dielectric interface that strongly affect the OFET performance. Atomic force microscopy, optical microscopy using crossed-polarizers, and current-voltage and capacitance-voltage characterization were performed on treated and untreated devices. A model is presented to account for the effects of trap-introduced charges, both 1) fixed charges (2.0/spl times/10/sup -6/ C/cm/sup 2/) that shift the threshold voltage from -17 to +116 V and 2) mobile charges (1.1/spl times/10/sup -6/ C/cm/sup 2/) that increase the parasitic bulk conductivity. This technique offers a potential method of tuning threshold voltage at the process level.
Sponsorship	IEEE Electron Devices Society
Starting Page	9
Ending Page	13
Page Count	5
File Size	419375
File Format	PDF
ISSN	00189383
Volume Number	53
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FETs Semiconductor-insulator interfaces Interface phenomena Dielectric materials Surface treatment Atomic force microscopy Charge carrier lifetime thin-film transistors (TFTs) Organic compounds
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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