NDLI: Interlevel dielectric failures in copper/low-k structures

Content Provider	IEEE Xplore Digital Library
Author	Alers, G.B. Jow, K. Shaviv, R. Kooi, G. Ray, G.W.
Copyright Year	2001
Abstract	Failure modes for inter-level dielectric layers under accelerated test conditions have been evaluated for a range of dielectric diffusion barriers in copper/low-k structures. The dominant failure mechanism for both constant voltage tests and ramped voltage tests was mechanical cracking at the dielectric barrier/low-k interface. Few occurrences of copper diffusion through the bulk ILD were observed. A simple model for the dominant failure mechanism is proposed which hypothesizes crack formation due to the electrostatic force between interdigitated lines followed by copper extrusion into the cracks. The proposed model is consistent with measurements of interfacial adhesion strengths in Cu/low-k stacks.
Sponsorship	IEEE Electron Devices Society IEEE Reliability Society
Starting Page	148
Ending Page	152
Page Count	5
File Size	195506
File Format	PDF
ISSN	15304388
Volume Number	4
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Breakdown voltage Dielectric materials Dielectric breakdown Stress Silicon compounds Extrapolation Life testing Life estimation Failure analysis
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Safety, Risk, Reliability and Quality Electrical and Electronic Engineering

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