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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tanzawa, T. Umezawa, A. Taura, T. Shiga, H. Hara, T. Takano, Y. Miyaba, T. Tokiwa, N. Watanabe, K. Watanabe, H. Masuda, K. Naruke, K. Kato, H. Atsumi, S. |
| Copyright Year | 1966 |
| Abstract | The highest bit-density 64-Mb NOR flash memory with dual-operation function of 44 mm/sup 2/ was developed by introducing negative-gate channel-erase NOR flash memory cell technology, 0.16-/spl mu/m CMOS flash memory process technology, and four-bank hierarchical word-line and bit-line architecture. The chip has flexible block redundancy for high yield, a fast accurate word-line voltage controller for a fast erasing time of 0.5 s, and an eight-word page-read access capability for high read performance of an effective access time of 30 ns at a wide supply voltage range of 2.3-3.6 V. |
| Sponsorship | IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE |
| Starting Page | 1485 |
| Ending Page | 1492 |
| Page Count | 8 |
| File Size | 849168 |
| File Format | |
| ISSN | 00189200 |
| Volume Number | 37 |
| Issue Number | 11 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Flash memory Voltage control CMOS technology Power supplies Flash memory cells CMOS process Microelectronics Decoding Size control |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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