NDLI: Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Lukyanchikova, N. Petrichuk, M. Garbar, N. Simoen, E. Claeys, C.
Copyright Year	1963
Abstract	This paper reports on a detailed study of generation-recombination (GR) noise in buried-channel silicon-on-insulator (SOI) pMOSFETs, occurring in the linear operation mode. In particular, the plateau amplitude and the corner frequency (relaxation time /spl tau/) of the Lorentzian are investigated as a function of the front (V/sub Gf/) and of the back gate bias (V/sub Gb/). It is shown that different cases can be distinguished, depending of the conduction mode of the device, i.e. for surface or buried channel operation. For surface channel operation the GR noise parameters are strongly influenced by the back gate bias and only weakly dependent on V/sub Gf/. The opposite is true when the front interface starts to deplete, thereby pushing the channel deeper into the Si film. As is shown, the relaxation time depends exponentially on either V/sub Gf/ or V/sub Gb/. A similar exponential gate-bias dependence is found for the Lorentzian amplitude. Based on the observations, it is concluded that the GR noise originates from the front or the back interface, depending on the operation mode. The effective density of front and back interface traps can be derived from the GR noise amplitude.
Sponsorship	IEEE Electron Devices Society
Starting Page	417
Ending Page	423
Page Count	7
File Size	680361
File Format	PDF
ISSN	00189383
Volume Number	43
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise generators MOSFET circuits Semiconductor device noise Low-frequency noise Substrates CMOS technology Electrodes Noise figure Silicon on insulator technology Frequency
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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