NDLI: Laser linking of metal interconnects: analysis and design considerations

Content Provider	IEEE Xplore Digital Library
Author	Yu-Lin Shen Suresh, S. Bernstein, J.B.
Copyright Year	1963
Abstract	Lateral connections between adjacent lines of metallization have been developed in order to achieve high density linking for customization in programmable gate arrays and for additive redundancy in restructurable integrated circuits. Links were formed by focusing a pulsed laser between two same-level aluminum lines. The mechanism of link formation appears to be the nucleation of a fissure, induced by the thermal expansion mismatch between the metallization and the surrounding dielectric (SiO/sub 2/) and passivation layer (Si/sub 3/N/sub 4/); molten aluminum fills the crack. Numerical simulation by the finite element method was carried out using a plane strain model. The probable path for the link-forming fissure, as predicted by the model on the premise that the local maximum tensile stress determines cracking, is shown to be consistent with experimental observations. Parametric analyses were performed to gain insights into the linking processes. It is found that damage in the passivation can be avoided by increasing the thickness of the dielectric between the aluminum and the passivation. Reducing the spacing between the metal lines increases the chance of successfully forming the link. Under certain conditions, the linking propensity can also be increased by reducing the metal width. In addition, the link is much easier to form when symmetric laser heating between the two metal lines can be achieved. These findings can be directly applied to improving the design of the laser linking processes and devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	402
Ending Page	410
Page Count	9
File Size	2041742
File Format	PDF
ISSN	00189383
Volume Number	43
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Joining processes Optical design Aluminum Passivation Dielectrics Integrated circuit interconnections Integrated circuit metallization Optical pulses Thermal expansion Numerical simulation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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