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| Content Provider | IET Digital Library |
|---|---|
| Author | Bennamane, K. Akkez, I. Ben Cros, A. Beranger, C. Fenouillet Balestra, F. Ghibaudo, G. |
| Abstract | Mobility coupling effects due to remote Coulomb scattering (RCS) are demonstrated for the first time in FD-SOI CMOS devices subjected to front and back interface electrical degradation. The evolution with stress time of the front and back threshold voltages as well as of the low field mobility values has been obtained. The front and back interface mobility degradations were then correlated to the stress induced interfacial charge variations for each stressed interface. This enabled the clear demonstration of the existence of mobility coupling effects between the front and back interface by RCS through the silicon film. |
| Starting Page | 490 |
| Ending Page | 492 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 49 |
| e-ISSN | 1350911X |
| Issue Number | Issue 7, Mar (2013) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/49/7 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2012.4150 |
| Journal | Electronics Letters |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Back Interface Electrical Degradation Back Interface Mobility Degradations Back Threshold Voltage Carrier Mobility CMOS Integrated Circuit Front Interface Electrical Degradation Front Interface Mobility Degradations Front Threshold Voltage Mobility Coupling Effect MOSFET RCS Remote Coulomb Scattering Semiconductor Thin Film Silicon Silicon Film Silicon-on-insulator Stress Induced Interfacial Charge Variations Thin-film FD-SOI CMOS Device |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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