NDLI: A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Raul Rengel Martin, M.J. Gonzalez, T. Mateos, J. Pardo, D. Dambrine, G. Raskin, J.-P. Danneville, F.
Copyright Year	1963
Abstract	In this paper, a detailed research of the high-frequency noise sources and figures of merit (FOMs) of fabricated deep-submicrometer n-channel fully depleted silicon-on-insulator MOSFETs is carried out. Special care is given to reproduce the main topology parameters, together with the most relevant parasitic elements of real devices in order to accomplish an accurate and reliable simulation. The information provided by the Monte Carlo (MC) tool allows getting a physical insight of the relationship between internal quantities and the main noise sources inside the device; moreover, the spectral density of velocity fluctuations has been analyzed spatially in order to determine the local current noise source in the gradual channel and velocity overshoot sections of the effective channel. Together with the calculation of intrinsic noise sources, the MC simulator is able to reproduce the measurements for the main noise FOMs in the RF and microwave frequency ranges. Moreover, the whole simulation framework allows addressing the importance of parasitic elements in the final value of these FOMs.
Sponsorship	IEEE Electron Devices Society
Starting Page	523
Ending Page	532
Page Count	10
File Size	775662
File Format	PDF
ISSN	00189383
Volume Number	53
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Silicon on insulator technology Monte Carlo methods Semiconductor device modeling Semiconductor device noise velocity fluctuations Fully depleted silicon-on-insulator (FD-SOI) high-frequency noise minimum noise figure Monte Carlo (MC) simulation MOSFET parasitic resistances
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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