NDLI: Evaluation of the bonded silicon on insulator (SOI) wafer and the characteristics of PIN photodiodes on the bonded SOI wafer

Content Provider	IEEE Xplore Digital Library
Author	Usami, A. Kaneko, K. Fujii, Y. Ichimura, M.
Copyright Year	1963
Abstract	Electrical properties of the bonded silicon on insulator (SOI) wafer and characteristics of PIN photodiodes fabricated on the SOI layer were evaluated. A trap with deep energy level (about Ec-Et=0.55 eV) was observed in the SOI layer with 100 /spl mu/m- and 30 /spl mu/m-thickness using the deep level transient spectroscopy (DLTS) method. No trap was detected in the SOI layer with 10 /spl mu/m-thickness. This deep trap was not observed before the wafer bonding process and thus the trap is generated during the wafer bonding process. From primary mode lifetime (/spl tau//sub 1/) measurements, it is considered that the trap will works as the generation center or the recombination center. For PIN photodiodes on the SOI layer in which the trap was detected, the increases of dark current were observed. Spectral responses of photodiodes on the SOI layer were almost the same as that on the normal FZ-Si wafer. We fabricated PIN photodiodes with good spectral response.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	239
Ending Page	243
Page Count	5
File Size	451083
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon on insulator technology Wafer bonding PIN photodiodes Conductivity Epitaxial layers Spectroscopy Energy states Dark current Fabrication Costs
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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