NDLI: Base current reversal phenomenon in a CMOS compatible high gain n-p-n gated lateral bipolar transistor

Content Provider	IEEE Xplore Digital Library
Author	Tzuen-Hsi Huang Ming-Jer Chen
Copyright Year	1963
Abstract	Base current reversal phenomenon is newly observed in a CMOS compatible high gain n-p-n gated lateral bipolar transistor. We attribute this phenomenon to avalanche generation as verified experimentally and by two-dimensional device simulation. Detailed investigation reveals that: (i) the multiplication ratio increases exponentially with the collector voltage or equivalently the peak field at the surface collector corner; and (ii) the multiplication ratio is independent of not only the low level base-emitter forward biases applied but also the base width of the transistors fabricated by the same process. Design guideline for suppression of the base current reversal has been established such as to fully realize the potential of the gated lateral bipolar transistors, i.e., a very high current gain of 11,600 can be maintained as long as the power supply voltage is less than the critical value of 1.78 V. On the other hand, new application directly employing this phenomenon has been suggested. Comparisons between the base current reversal phenomenon in the gated lateral bipolar transistor and that in the vertical bipolar transistor have also been performed and significant differences between the two have been drawn and have been adequately explained.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	321
Ending Page	327
Page Count	7
File Size	703627
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bipolar transistors Voltage MOSFET circuits Boron Process design Guidelines Power supplies Hybrid junctions Circuit noise Cutoff frequency
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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