NDLI: Net positive-charge buildup in various MOS insulators due to high-field stressing

Content Provider	IEEE Xplore Digital Library
Author	Patrikar, R.M. Lal, R. Vasi, J.
Copyright Year	1980
Abstract	The buildup of net positive charge with field stressing has been observed in all thermally grown oxides, viz. dry, pyrogenic, reoxidized nitrided oxides (RNO), and reoxidized nitrided pyrogenic oxides (RNPO). The authors observed a faster rate of growth of net positive charge for dry oxides given a postmetalization anneal (PMA) in hydrogen than for those given a PMA in nitrogen; the fastest growth of net positive charge, however, was observed in pyrogenic oxides. It has been observed that in dry and pyrogenic oxides the positive-charge growth as a function of time obeys a power law with time under the stress of constant current or voltage. On the other hand, growth of positive charge in RNO and RNPO shows a two-piece linear growth of positive charge. These results suggest that positive-charge growth at high fields is related to both the hydrogen concentration and its drift in the oxide.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	530
Ending Page	532
Page Count	3
File Size	222228
File Format	PDF
ISSN	07413106
Volume Number	14
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulation Annealing Nitrogen Hydrogen Voltage Hafnium MOS capacitors Thermal stresses Conductors Circuits
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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