NDLI: A high-speed complementary silicon bipolar technology with 12-fJ power-delay product

Content Provider	IEEE Xplore Digital Library
Author	Cressler, J.D. Warnock, J. Harame, D.L. Burghartz, J.N. Jenkins, K.A. Chuang, C.-T.
Copyright Year	1980
Abstract	A complementary silicon bipolar technology offering a substantial improvement in power-delay performance over conventional n-p-n-only bipolar technology is demonstrated. High-speed n-p-n and p-n-p double-polysilicon, self-aligned transistors were fabricated in a 20-mask-count integrated process using an experimental test site designed specifically for complementary bipolar applications. N-p-n and p-n-p transistors with 0.50- mu m emitter widths have cutoff frequencies of 50 GHz and 13 GHz, respectively. Two novel complementary bipolar circuits-AC-coupled complementary push-pull ECL, and NTL with complementary emitter-follower-display a significant advantage in power dissipation as well as gate delay when compared to conventional n-p-n-only ECL circuits. Record power-delay products of 34 fJ (23.2 ps at 1.48 mW) and 12 fJ (19.0 ps at 0.65 mW) were achieved for these unloaded complementary circuits, respectively. These results demonstrate the feasibility and resultant performance leverage of high-speed complementary bipolar technologies.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	523
Ending Page	526
Page Count	4
File Size	383623
File Format	PDF
ISSN	07413106
Volume Number	14
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power dissipation Integrated circuit technology CMOS technology Silicon on insulator technology Bipolar transistors CMOS logic circuits Very large scale integration Isolation technology Circuit testing Automatic testing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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