NDLI: Burnout of Junction Field Effect Transistors

Content Provider	IEEE Xplore Digital Library
Author	Long, David M. Swant, David H.
Copyright Year	1963
Abstract	This paper presents the results of a study on burnout characteristics of n-channel silicon junction field effect transistors as established by electrical pulse injection tests and high dose rate radiation tests. For reverse biased pulse injection tests on JFETs connected in a diode configuration (source and drain tied together), current-mode second breakdown was observed at short failure times (tf<0.1¿s) while thermally-induced second breakdown occurred at longer times. The high voltage JFETs tested were found to be much more susceptible to reverse bias pulse injection damage than were the low voltage JFETs (attributed to surface effects). When the gate lead of an actively biased device was driven with a forward biased pulse, the JFET failed due to heating in the pinchoff region of the channel causing a drain-gate short. Under Flash X-ray radiation tests, the diode configuration exhibited photocurrent enhancement near the same current levels at which current-mode second breakdown occurred in the pulse injection tests, but higher power dissipation could be tolerated before device damage was incurred. When irradiated in the active configuration, the onset of photocurrent enhancement resulted in a sustained high current mode which persisted until metallization burnout occurred.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	149
Ending Page	157
Page Count	9
File Size	3823165
File Format	PDF
ISSN	00189499
Volume Number	20
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1973-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FETs Testing JFETs Electric breakdown Diodes Photoconductivity Silicon Low voltage Heating Power dissipation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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