NDLI: Annealing Model for Lithium-Doped Solar Cells

Content Provider	IEEE Xplore Digital Library
Author	Horne, W. E. Madaras, B. K. Russell, D. A.
Copyright Year	1963
Abstract	A study has been performed on P/N lithium doped silicon solar cells to develop a mathematical model for the annealing of radiation damage. Experiments with low energy protons (0.25, 1.0, and 2.0 MeV) indicate that the annealing rates of proton damage are a function of the local position of damage within the solar cell base. Compton electron studies were used to determine introduction rates for annealable and unanneable damage. Pulsed 10 MeV electron tests permitted the observation of short circuit current recovery from 1 to 105 seconds for comparison with the mathematical model. These data are used as inputs into a diffusion limited reaction model of the defect annealing phenomena. Nonuniformities of the dopant profiles within the solar cell base are accounted for by a two-region model of the solar cell base. The two-region model of the solar cell using the diffusion limited reaction theory of annealing yields equations which describe the short circuit current recovery in lithium doped solar cells very well for both electron and proton damage.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	250
Ending Page	255
Page Count	6
File Size	868763
File Format	PDF
ISSN	00189499
Volume Number	20
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1973-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Photovoltaic cells Protons Electrons Semiconductor process modeling Lithium Mathematical model Circuit testing Short circuit currents Silicon
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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