NDLI: Electron Paramagnetic Resonance of the Lattice Damage in Boron-Implanted Intrinsic Silicon

Content Provider	IEEE Xplore Digital Library
Author	Beezhold, Wendland Brower, K. L.
Copyright Year	1963
Abstract	The nature of the lattice damage in boron-implanted intrinsic silicon has been studied as a function of 140-keV 11B+ ion fluence using electron paramagnetic resonance (EPR). At most of the boron fluences, the observed EPR spectra consisted primarily of neutral 4-vacancies (Si-P3) and of unresolved E spectra (defects unknown). Concentrations (number/cm2) for the Si-P3 and ¿ paramagnetic defects have been determined as a function of ion fluence for fluences ranging from 5 × 1012 to 1016 11B+/cm2. At the highest fluences the beginning of an isotropic resonance indicative of amorphous silicon was also observed. However, only a trace of the amorphous resonance was observed, and this resonance was found to be broadened and shifted to a lower magnetic field with a g value of 2.0071 instead of the usual 2.0055. Also observed at the higher fluences was the new anisotropic spectrum (labeled Si-SL3) arising from a defect having D2d symmetry. Finally, isochronal annealing studies indicate that the Si-P3 and ¿ concentrations decrease toward zero by a 225° C anneal in a manner similar to that previously observed for oxygen-implanted-silicon. No paramagnetic defects were observed in the 600 to 900° C range. It is concluded that any electrical activity annealing in the 600 to 900° C range is primarily a result of a decrease in the number of compensating non-paramagnetic or diamagnetic defect centers.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	209
Ending Page	213
Page Count	5
File Size	983129
File Format	PDF
ISSN	00189499
Volume Number	20
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1973-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrons Paramagnetic resonance Lattices Magnetic resonance Annealing Paramagnetic materials Boron Amorphous silicon Amorphous materials Magnetic fields
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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