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Ingap heterojunction barrier solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2014 |
| Description | A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency. |
| File Size | 811366 |
| Page Count | 11 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150003363 |
| Archival Resource Key | ark:/13960/t1ng9nh2r |
| Language | English |
| Publisher Date | 2014-10-21 |
| Access Restriction | Open |
| Subject Keyword | Solar Physics Solar Cells Patents Gallium Phosphides Gallium Arsenides Depletion Barrier Layers Quantum Dots Indium Phosphides Heterojunction Devices Electric Fields Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
