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Schottky barrier solar cell
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Stirn, R. J. |
| Copyright Year | 1981 |
| Description | A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. |
| File Size | 1301599 |
| Page Count | 10 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19810020987 |
| Archival Resource Key | ark:/13960/t74v1f09p |
| Language | English |
| Publisher Date | 1981-07-14 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Schottky Diodes Gallium Arsenides Metal Oxide Semiconductors Semiconductors Materials Barrier Layers Oxide Films Germanium Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
