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Strained layer inp/ingaas quantum well laser
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1993 |
| Description | Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate. |
| File Size | 518145 |
| Page Count | 7 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20080005944 |
| Archival Resource Key | ark:/13960/t59d1vn48 |
| Language | English |
| Publisher Date | 1993-10-26 |
| Access Restriction | Open |
| Subject Keyword | Lasers And Masers Quantum Well Lasers Patents Indium Gallium Arsenides Indium Phosphides Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
