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Inp solar cell with window layer
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1994 |
| Description | The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells. |
| File Size | 567778 |
| Page Count | 7 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19940030724 |
| Archival Resource Key | ark:/13960/t94799v46 |
| Language | English |
| Publisher Date | 1994-06-21 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Aluminum Arsenides Semiconductors Materials Indium Aluminum Arsenides Passivity Surface Layers Indium Arsenides Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |