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Electrical characterization of 4h-sic jfet wafer: dc parameter variations for extreme temperature ic design
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Spry, David J. Neudeck, Philip G. Beheim, Glenn M. Chang, Carl W. Chen, Liangyu |
| Copyright Year | 2014 |
| Description | This work reports DC electrical characterization of a 76 mm diameter 4H-SiC JFET test wafer fabricated as part of NASA's on-going efforts to realize medium-scale ICs with prolonged and stable circuit operation at temperatures as high as 500 degC. In particular, these measurements provide quantitative parameter ranges for use in JFET IC design and simulation. Larger than expected parameter variations were observed both as a function of position across the wafer as well as a function of ambient testing temperature from 23 degC to 500 degC. |
| File Size | 178662 |
| Page Count | 4 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150000740 |
| Archival Resource Key | ark:/13960/t6c29wr12 |
| Language | English |
| Publisher Date | 2014-09-21 |
| Access Restriction | Open |
| Subject Keyword | Microelectronics Jfet Silicon Carbides Resistors Integrated Circuits Electric Potential Electrical Properties Simulation Ambient Temperature Wafers Transistor Circuits Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
