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A scanning defect mapping system for semiconductor characterization
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Sopori, Bushnan L. |
| Copyright Year | 1994 |
| Description | We have developed an optical scanning system that generates maps of the spatial distributions of defects in single and polycrystalline silicon wafers. This instrument, called Scanning Defect Mapping System, utilizes differences in the scattering characteristics of dislocation etch pits and grain boundaries from a defect-etched sample to identify and count them. This system simultaneously operates in the dislocation mode and the grain boundary (GB) mode. In the 'dislocation mode,' the optical scattering from the etch pits is used to statistically count dislocations, while ignoring the GB's. Likewise, in the 'grain boundary mode' the system only recognizes the local scattering from the GB's to generate grain boundary distributions. The information generated by this instrument is valuable for material quality control, identifying mechanisms of defect generation and the nature of thermal stresses during the crystal growth, and the solar cell process design. |
| File Size | 522679 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19940027940 |
| Archival Resource Key | ark:/13960/t6m091r4n |
| Language | English |
| Publisher Date | 1994-02-01 |
| Access Restriction | Open |
| Subject Keyword | Optics Solar Cells Crystal Growth Grain Boundaries Crystal Defects Crystal Dislocations Light Scattering Optical Scanners Polycrystals Characterization Spatial Distribution Semiconductors Materials Wafers Silicon Detection Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
