NDLI: Structural defects in crystalline silicon

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Structural defects in crystalline silicon

Content Provider	NASA Technical Reports Server (NTRS)
Author	Sirtl, E.
Copyright Year	1985
Description	The basic photovoltaic properties of a given crystalline silicon specimen seem to be governed by density and nature of two to three dimensional lattice defects. These are mainly generated by primary growth conditions as grain boundaries of more or less intrinsic character or second phase precipitates from supersaturated solutions of carbon or oxygen. Considerably high values of both solubility and diffusivity in connection with their abundance in common refractory material systems account for the predominance of the two particular elements. Unsaturated dislocations of different types very often can be seen as a consequence of the existence of more dimensional defects as described initially. The final performance of a solar cell is dependent of the concentration and distribution of recombination active centers in the different regions of this device. Typical representatives are fast diffusing transition metals in form of either single atoms or simple complexes. Their avoidance, annihilation, or removal is of great concern in different fields of electronic materials development.
File Size	89267
Page Count	2
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19850023317
Archival Resource Key	ark:/13960/t8bg7jz55
Language	English
Publisher Date	1985-05-15
Access Restriction	Open
Subject Keyword	Energy Production And Conversion Solar Cells Grain Boundaries Concentration Composition Crystal Defects Photovoltaic Effect Crystal Lattices Precipitation Chemistry Solubility Silicon Precipitates Diffusivity Crystal Structure Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Article

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