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Sinterless contacts to shallow junction inp solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Weizer, V. G. Fatemi, N. S. Korenyi-Both, A. L. |
| Copyright Year | 1992 |
| Description | In the past, the achievement of good electrical contact to InP has inevitably been accompanied by mechanical degradation of the InP itself. Most contact systems require heat treatment after metal deposition that results in the dissolution of substantial amounts of InP into the metallization. Devices such as the solar cell, where shallow junctions are the rule, can be severely degraded if the damage to the semiconductor substrate is not precisely controlled. Two contact systems are described that provide low contact resistance to InP solar cells that do not require subjecting the current carrying metallization to a post deposition sintering process. It is shown that these two systems, one nickel based and the other silver based, provide contact resistivity values in the low 10(exp -6) ohm sq cm range, as fabricated, without the need for sintering. |
| File Size | 487208 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19920015559 |
| Archival Resource Key | ark:/13960/t16m85946 |
| Language | English |
| Publisher Date | 1992-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Electric Contacts Metallizing Contact Resistance Substrates Degradation Fabrication Silver Dissolving Electrical Resistivity Semiconductors Materials Sintering Indium Phosphides Nickel Damage Deposition Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
