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Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction inp solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Weizer, V. G. Fatemi, N. S. Korenyi-Both, A. L. |
| Copyright Year | 1993 |
| Description | Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior. |
| File Size | 510147 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19930023012 |
| Archival Resource Key | ark:/13960/t9t19xg6t |
| Language | English |
| Publisher Date | 1993-05-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Fabrication Gold Electrical Resistivity Indium Phosphides Sintering Germanium Contact Resistance Deposition Thermal Stability Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
