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Lateral spreading of au contacts on inp
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Weizer, Victor G. Fatemi, Navid S. |
| Copyright Year | 1990 |
| Description | The contact spreading phenomenon observed when small area Au contacts on InP are annealed at temperatures above about 400 C was investigated. It was found that the rapid lateral expansion of the contact metallization which consumes large quantities of InP during growth is closely related to the third stage in the series of solid state reactions that occur between InP and Au, i.e., to the Au3In-to-Au9In4 transition. Detailed descriptions are presented of both the spreading process and the Au3In-to-Au9In4 transition along with arguments that the two processes are manifestations of the same basic phenomenon. |
| File Size | 603459 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19900013527 |
| Archival Resource Key | ark:/13960/t7tn24854 |
| Language | English |
| Publisher Date | 1990-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Gold Annealing Metal Bonding Semiconductor Devices Electric Contacts Spreading Indium Phosphides Sintering Metallizing Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |