NDLI: Improvements in contact resistivity and thermal stability of au-contacted inp solar cells

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Improvements in contact resistivity and thermal stability of au-contacted inp solar cells

Content Provider	NASA Technical Reports Server (NTRS)
Author	Weizer, Victor G. Fatemi, Navid S.
Copyright Year	1991
Description	Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.
File Size	389483
Page Count	8
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19910020893
Archival Resource Key	ark:/13960/t1xd5sw52
Language	English
Publisher Date	1991-08-01
Access Restriction	Open
Subject Keyword	Energy Production And Conversion Solar Cells Gold Heat Treatment Gallium Electric Contacts Metallizing Chemical Reactions Solid-solid Interfaces Open Circuit Voltage Thermal Stability Dissolving Electrical Resistivity Indium Phosphides Heterojunctions N-type Semiconductors Emitters Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Article

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