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A i-v analysis of irradiated gallium arsenide solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Kinnison, J. D. Heulenberg, A. Maurer, R. H. |
| Copyright Year | 1991 |
| Description | A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells. |
| File Size | 289347 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19910020928 |
| Archival Resource Key | ark:/13960/t7np6zx8b |
| Language | English |
| Publisher Date | 1991-08-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Solar Cells Protons Gallium Arsenides Additives Electron Irradiation Proton Irradiation Dominance Radiation Damage Computer Programs Electrons Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
