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Gallium arsenide solar cell radiation damage experiment
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Kinnison, J. D. Meulenberg, A. Maurer, R. H. Herbert, G. A. |
| Copyright Year | 1991 |
| Description | Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment. |
| File Size | 564243 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19910020927 |
| Archival Resource Key | ark:/13960/t07x1945k |
| Language | English |
| Publisher Date | 1991-08-01 |
| Access Restriction | Open |
| Subject Keyword | Spacecraft Propulsion And Power Solar Cells Gallium Arsenides Performance Tests Electrical Properties Fluence Spacecraft Power Supplies Substrates Electron Irradiation Proton Irradiation Weight Reduction Germanium Silicon Radiation Damage Technology Utilization Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
