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Study of electronic properties in proton- and electron-irradiated gaalas and gaas solar cell materials
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Li, S. S. |
| Copyright Year | 1978 |
| Description | Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins. |
| File Size | 5334366 |
| Page Count | 70 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19780021625 |
| Archival Resource Key | ark:/13960/t6838m712 |
| Language | English |
| Publisher Date | 1978-08-31 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Aluminum Gallium Arsenides Capture Effect Trapping Gallium Arsenides Energy Levels Electron Irradiation Semiconductors Materials Proton Irradiation Electron Emission Absorption Cross Sections Radiation Damage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
