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High energy proton radiation damage to (alga)as-g aas solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Kamath, S. Goldhammer, L. Loo, R. Knechtli, R. C. |
| Copyright Year | 1979 |
| Description | Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested. |
| File Size | 1526980 |
| Page Count | 40 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19790016090 |
| Archival Resource Key | ark:/13960/t9673842r |
| Language | English |
| Publisher Date | 1979-06-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Solar Cells Aluminum Compounds Gallium Arsenides Silicon Radiation Damage Proton Irradiation Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
