NDLI: Tunnel junctions for inp-on-si solar cells

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Tunnel junctions for inp-on-si solar cells

Content Provider	NASA Technical Reports Server (NTRS)
Author	Vernon, S. Keavney, C. Haven, V.
Copyright Year	1991
Description	Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.
File Size	331416
Page Count	8
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19910020890
Archival Resource Key	ark:/13960/t5t779q6q
Language	English
Publisher Date	1991-08-01
Access Restriction	Open
Subject Keyword	Energy Production And Conversion Solar Cells Crystal Growth Gallium Arsenides Organometallic Compounds P-type Semiconductors Heterojunction Devices Substrates Vapor Deposition Doped Crystals Electrical Resistivity Electron Tunneling Indium Phosphates N-type Semiconductors Silicon P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Article

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