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N/p inp homojunction solar cells with an in0.53ga0.47as contacting layer grown by liquid phase epitaxy
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Shen, C. C. Choi, K. Y. |
| Copyright Year | 1989 |
| Description | N/P InP homojunction solar cells with an In sub 0.53 Ga sub 0.47 As contacting layer were fabricated by liquid phase epitaxy (LPE). Electron-Beam-Induced-Current (EBIC) measurements were performed on several selected samples. It was found that the background doping level in the base region sometimes results in a deep junction, which greatly affects the cell performance. |
| File Size | 1997057 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19890015339 |
| Archival Resource Key | ark:/13960/t1vf1qx7v |
| Language | English |
| Publisher Date | 1989-04-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Fabrication Liquid Phase Epitaxy Gallium Arsenides Additives Electron Beams Quantum Efficiency Photovoltaic Effect Wafers Indium P-n Junctions Homojunctions Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |