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A v-grooved algaas/gaas passivated pn junction
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Leon, Rosa P. Arrison, Anne Bailey, Sheila G. |
| Copyright Year | 1987 |
| Description | A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction. |
| File Size | 9122401 |
| Page Count | 13 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19870018108 |
| Archival Resource Key | ark:/13960/t9867df5p |
| Language | English |
| Publisher Date | 1987-05-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Solar Cells Scanning Electron Microscopy Gallium Arsenides Organometallic Compounds Etching Grooves Electron Microscopy Passivity Aluminum Gallium Arsenides Vapor Deposition Solar Radiation Radiation Protection P-n Junctions Reflectance Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
