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Advances in silicon carbide chemical vapor deposition (cvd) for semiconductor device fabrication
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Petit, Jeremy B. Powell, J. Anthony Matus, Lawrence G. |
| Copyright Year | 1991 |
| Description | Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates. |
| File Size | 4326480 |
| Page Count | 9 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19910014633 |
| Archival Resource Key | ark:/13960/t8dg1np4p |
| Language | English |
| Publisher Date | 1991-01-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Fabrication Vapor Deposition Doped Crystals Semiconductor Devices Wafers Epitaxy Silicon Carbides Polarity Surface Treatment Substrates Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
