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Method of fabricating germanium and gallium arsenide devices
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1990 |
| Description | A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed. |
| File Size | 348768 |
| Page Count | 10 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19910004753 |
| Archival Resource Key | ark:/13960/t79s6nx53 |
| Language | English |
| Publisher Date | 1990-08-31 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Fabrication Gallium Arsenides Vapor Deposition Doped Crystals Wafers Epitaxy Molecular Beam Epitaxy Germanium Etching Semiconductor Diodes Substrates Silicon Dioxide Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
