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Silicon carbide, a semiconductor for space power electronics
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Powell, J. Anthony Matus, Lawrence G. |
| Copyright Year | 1991 |
| Description | After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K. |
| File Size | 435111 |
| Page Count | 10 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19910005537 |
| Archival Resource Key | ark:/13960/t2g78955h |
| Language | English |
| Publisher Date | 1991-01-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Crystal Growth Boules Additives Field Effect Transistors Metallizing Silicon Carbides Spacecraft Power Supplies Etching High Temperature Environments Fabrication Single Crystals Vapor Deposition Reactivity Semiconductors Materials Wafers Oxidation P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
