NDLI: Inas/gaas and inas doping superlattices

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Inas/gaas and inas doping superlattices

Content Provider	NASA Technical Reports Server (NTRS)
Author	Hancock, Bruce R. Maserjian, Joseph Grunthaner, Frank J.
Copyright Year	1990
Description	The extension of the optical response of narrow band gap III-V semiconductors into the long wavelength infrared radiation (LWIR) regime for high sensitivity sensor applications is a challenging problem. Recent advances in nipi doped GaAs superlattices, lattice mismatched epitaxy and the heteroepitaxial growth of III-V compound semiconductors on silicon substrates offer a number of opportunities. Researchers describe two different device approaches based on the molecular beam epitaxy (MBE) growth of superlattice materials which are directed to LWIR focal plane array technology. The first of these uses nipi superlattices fabricated in bulk InAs which has been grown on either GaAs or Si substrates. The second is based on the growth of a new pseudomorphic tetragonal phase of InAs on GaAs to create a semimetal/semiconductor superlattice material.
File Size	454229
Page Count	16
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19910005096
Archival Resource Key	ark:/13960/t26b21z49
Language	English
Publisher Date	1990-07-01
Access Restriction	Open
Subject Keyword	Spacecraft Instrumentation Additives Gallium Arsenides Photodiodes Substrates Indium Arsenides Focal Plane Devices Narrowband Fabrication Sensitivity Doped Crystals Semiconductors Materials Superlattices Molecular Beam Epitaxy Infrared Radiation Silicon Arrays Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Article

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