NDLI: Development of a unique laboratory standard: indium gallium arsenide detector for the 500-1700 nm spectral region

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Development of a unique laboratory standard: indium gallium arsenide detector for the 500-1700 nm spectral region

Content Provider	NASA Technical Reports Server (NTRS)
Copyright Year	1987
Description	A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.
File Size	1724700
Page Count	42
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19890016827
Archival Resource Key	ark:/13960/t3518wk2w
Language	English
Publisher Date	1987-08-27
Access Restriction	Open
Subject Keyword	Infrared Detectors Gallium Arsenides Spectral Bands Photometers Photodiodes Indium Arsenides Narrowband Fabrication Electrical Measurement Vapor Phase Epitaxy Quantum Efficiency Spectrometers Optical Properties Indium Phosphides Surface Properties Visible Spectrum Antireflection Coatings Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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