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Inas hole-immobilized doping superlattice long-wave-infrared detector
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1992 |
| Description | An approach to long-wave-infrared (LWIR) technology is discussed. The approach is based on molecular beam epitaxy (MBE) growth of hole immobilized doping superlattices in narrow band gap 3-5 semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures suitable for focal plane arrays. An LWIR detector that has high detectivity performance to wavelengths of about 16 microns at operating temperatures of 65K, where long-duration space refrigeration is plausible, is presented. |
| File Size | 796432 |
| Page Count | 11 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19930001868 |
| Archival Resource Key | ark:/13960/t8dg1nr8h |
| Language | English |
| Publisher Date | 1992-07-21 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Long Wave Radiation Infrared Detectors Additives Indium Antimonides Semiconductors Materials Superlattices Molecular Beam Epitaxy Infrared Radiation Indium Arsenides Focal Plane Devices Narrowband Operating Temperature Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |