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Ebic/tem investigations of process-induced defects in efg silicon ribbon
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Ast, D. G. Cunningham, B. |
| Copyright Year | 1981 |
| Description | Electron bombardment induced conductivity and scanning transmission electron microscopy observations on unprocessed and processed edge-defined film-fed growth ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found (1) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and (2) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume. |
| File Size | 1577458 |
| Page Count | 9 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820018927 |
| Archival Resource Key | ark:/13960/t0004zg81 |
| Language | English |
| Publisher Date | 1981-12-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Crystal Growth Grain Boundaries Crystal Defects Phosphorus Twinning High Temperature Electron Microscopy Precipitates Defects Transmission Electron Microscopy Dendritic Crystals Silicon X Ray Spectra Diffusion Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
