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Efficiency of silicon solar cells containing chromium
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1982 |
| Description | Efficiency of silicon solar cells containing about one quadrillon atoms cu cm of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200 C to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon mateial. |
| File Size | 573947 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820018901 |
| Archival Resource Key | ark:/13960/t9f52h01g |
| Language | English |
| Publisher Date | 1982-01-19 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Annealing Photovoltaic Cells Impurities Precipitation Chemistry Lasers Chromium Scoring Precipitates Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
